| PART |
Description |
Maker |
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V216ATP M5M5V216ART D98013_A M5M5V216ATP-55LW |
2097152-bit CMOS static RAM
From old datasheet system
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI |
Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）
CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
